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Advance Technical Information
TrenchT2 TM HiperFET TM
Power MOSFET
IXFA130N10T2
IXFP130N10T2
V DSS
I D25
R DS(on)
= 100V
= 130A
≤ 9.1m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXFA)
Fast Intrnsic Rectifier
G
S
Symbol
Test Conditions
Maximum Ratings
D (Tab)
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
100
100
± 20
± 30
V
V
V
V
TO-220AB (IXFP)
I D25
I LRMS
I DM
T C = 25 ° C (Chip Capability)
Lead Current Limit, RMS
T C = 25 ° C, Pulse Width Limited by T JM
130
120
300
A
A
A
G
DS
D (Tab)
I A
E AS
dV/dt
P D
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM ,, V DD ≤ V DSS ,T J ≤ 175 ° C
T C = 25 ° C
65
800
20
360
A
mJ
V/ns
W
G = Gate
S = Source
Features
D = Drain
Tab = Drain
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
T L
T sold
M d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220)
TO-263
TO-220
300
260
1.13 / 10
2.5
3.0
° C
° C
Nm/lb.in.
g
g
Fast Intrinsic Rectifier
Dynamic dV/dt Rated
Low R DS(on)
Advantages
Easy to Mount
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Space Savings
High Power Density
BV DSS
V GS(th)
I GSS
I DSS
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 1mA
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 150 ° C
100
2.0
V
4.5 V
± 200 nA
10 μ A
500 μ A
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Notes 1, 2
9.1 m Ω
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
? 2009 IXYS CORPORATION, All Rights Reserved
DS100111(10/09)
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